姓 名:
职称: 教授
所在院系:
联系电话:
个人主页: #
E-MAIL: wzhang0@mail.xjtu.edu.cn
专业方向: 电子材料
个人详情

教育背景:

20049月至20086 物理学学士 浙江大学

20089月至20106 物理学硕士 浙江大学

20114月至20143 物理学博士 德国亚琛工业大学

工作简历:

2017年4月至今 教授 西安交通大学

20155月至2017年3月 特聘研究员 西安交通大学

20144月至20154 博士后研究员 德国亚琛工业大学


研究领域:先进电子材料

(1)用于数据存储、内存芯片的相变存储材料、拓扑存储材料

(2)电子材料的第一性原理计算 (DFT, DFMD)

科研荣誉:

2016 中组部“千人计划”青年学者

2015 西安交通大学“青年拔尖人才”学者

2015 Borchers奖章,德国亚琛工业大学颁发

代表论文:

1. F. Rao,* K. Y. Ding, Y. X. Zhou, Y. H. Zheng, M. J. Xia, S. L. Lv, Z. T. Song,* S. L. Feng, I. Ronneberger, R. Mazzarello, W. Zhang* and E. Ma, "Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing", Science, 358, 1423-1427 (2017)

2. W. Zhang, A. Thiess, P. Zalden, R. Zeller, P. H. Dederichs, J.-Y. Raty, M. Wuttig*, S. Blügel, and R. Mazzarello*, "Role of vacancies in metal-insulator transitions of crystalline phase-change materials", Nature Materials 11, 952 (2012)

3. W. Zhang, I. Ronneberger, Y. Li, and R. Mazzarello*, "Magnetic properties of crystalline and amorphous phase-change materials doped with 3d impurities", Advanced Materials 24, 4387 (2012)

4. W. Zhang*, Volker L. Deringer, Richard Dronskowski, Riccardo Mazzarello, Evan Ma, Matthias Wuttig, "Density functional theory guided advances in phase-change materials and memories", MRS Bulletin, 40, 856-869 (2015).

5. Y. Li, W. Zhang, M. Morgenstern, and R. Mazzarello*, "Electronic and magnetic properties of zigzag graphene nanoribbons on the (111) surface of Cu, Ag and Au", Phys. Rev. Lett. 110, 216804 (2013)

6. V.-L. Deringer, W. Zhang, M. Lumeij, S. Maintz, M. Wuttig, R. Mazzarello,* R. Dronskowski*,"Bonding Nature of Local Structural Motifs in Amorphous GeTe". Angew. Chem. Int. Ed. 53, 10817-10820 (2014)

7. J.-Y. Raty, W. Zhang, J. Luckas, R. Mazzarello, C. Bichara, M. Wuttig, "Aging mechanisms in amorphous phase-change materials", Nature Communications 6, 7467 (2015)

8. I. Ronneberger, W. Zhang, H. Eshet, R. Mazzarello*, "Crystallization properties of Ge2Sb2Te5 phase-change compound from advanced simulations", Adv. Funct. Mater. 40, 6407-6413 (2015)

9. M. Xu*, W. Zhang, R. Mazzarello and M. Wuttig*, "Disorder Control in Crystalline GeSb2Te4 using High Pressure", Advanced Science 2, 1500117 (2015)

10. Y.-C. Wang, W. Zhang*, L.-Y. Wang, Z. Zhuang, E. Ma, J. Li, Z.-W. Shan*, "In situ TEM study of deformation-induced crystalline-to-amorphous transition in silicon", NPG Asia Materials, 8, e291 (2016)