姓 名: 李燕
职称: 新讲师
所在院系: 表面室
联系电话:
个人主页:
E-MAIL: liyan0802@xjtu.edu.cn
专业方向: 二维材料及其异质结构物理特性的第一性原理计算研究
个人详情

研究领域或方向

l 研究领域一: 二维材料新奇物理特性的理论研究及其调控

l 研究领域二:van der Waals异质结电子特性的理论研究及其调控

l 研究领域三:新型二维材料作为锂电池电极材料的理论研究

工作经历

l 工作经历一:2016/06—至今,西安交通大学材料与科学工程学院,新讲师

l 工作经历二:2017/03-2018/03,劳伦斯伯克利国家实验室,访问学者

科研项目

l 科研项目一:磷烯/TMDs异质结的电子和光学特性及其应变和电场调控研究, 2018/01-2020/12

l 科研项目二:Van der Waals异质结的电子结构调控及其光电功能器件研究,2017/03-2019/03

学术成果

1. Yan Li, Fei Ma, “Size and strain tunable band alignment of black–blue phosphorene lateral heterostructures” Phys.Chem.Chem.Phys. 19,12466 (2017)

2.   Yan Li, Zhongming Wei and Jingbo Li, “Modulation of the Electronic Properties of Phosphorene by Wrinkle and Vertical Electric Field,” Appl. Phys. Lett.107, 112103 (2015).

3.   Yan Li, Hui Chen, Le Huang and Jingbo Li, “Ab Initio Study of the Dielectric and Electronic Properties of Multilayer GaS Films,” J. Phys. Chem. Lett. 6, 1059, (2015).

4.   Yan Li, Shengxue Yang and Jingbo Li, “Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field,” J. Phys. Chem. C 118, 23970 (2014).

5.   Yan Li, Jun Kang and Jingbo Li, “Indirect-to-Direct Band Gap Transition of the ZrS2 Monolayer by Strain: First-Principles Calculations,” RSC Adv. 4, 7396 (2014).

6.   Yan Li, Sefaattin Tongay, Qu Yue, Jun Kang, Junqiao Wu, Jingbo Li, “Metal to Semiconductor Transition in Metallic Transition Metal Dichalcogenides,” J. Appl. Phys. 114, 174307 (2013).

7.   Yan Li, Qu Yue, “First-Principles Study of Electronic and Magnetic Properties of FeCl3-based Graphite Intercalation Compounds,” Physica B, 425, 72 (2013).

8.  Chao Fan, Yan Li*, Fangyuan Lu, Hui-Xiong Deng, Zhongming Wei and Jingbo Li, “Wavelength Dependent UV-Vis Photodetectors of SnS2 Flakes” RSC Adv. 6, 422 (2016)

9.  Hui Chen, Yan Li*, Le Huang and Jingbo Li, “Intrinsic Defects in Gallium Sulfide Monolayer: a First-Principles Study,” RSC Adv. 5, 50883 (2015).

10.  Hui Chen, Yan Li*, Le Huang and Jingbo Li, Qu “Influential Electronic and Manetic properties of the Gallium Sulfide Monolayer by Substitutional Doping ”, J. Phys. Chem. C 119, 29148 (2015).